Electronics Letters · 1979 · 56 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsInterface EngineeringSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsContact ResistanceElectrical Contact ResistanceOhmic ContactsOhmic MaterialsProcess ParametersProcess Parameters OptimizationResistivitySurface Coverage
The contact resistivity of Au–Ge contacts on n-type GaAs was reduced by about one order of magnitude by replacing the usual Ni top layer with an SiO2 layer. Surface coverage and edge definition of the contact areas can be optimised by proper choice of process parameters, making this technology suitable for submicrometre device processing.
2
Models for contacts to planar devices
Microelectronics Reliability · 1972 · 818 citations
Engineering, Electrical Engineering, Electronic Materials +5