Comparative study on carbon incorporation in MOCVD AlGaAs layers between arsine and tertiarybutylarsine

Mechanism of carbon incorporation in MOCVD GaAs

T. F. Kuech, E. Veuhoff · Journal of Crystal Growth · 1984 · 226 citations

Engineering, Materials Engineering, Materials Science +12

THE PYROLYSIS OF TRIMETHYL GALLIUM

M. G. Jacko, S. J. W. Price · Canadian Journal of Chemistry · 1963 · 225 citations

Natural Sciences, Chemical Engineering, Chemistry +14

(AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor deposition

Takashi Fukui, Hisao Saito · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 198 citations

Natural Sciences, Materials Science, Physics +17

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech, M. A. Tischler, P.-J. Wang et al. · Applied Physics Letters · 1988 · 180 citations

Engineering, Materials Engineering, Materials Science +14

Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs

C.A. Larsen, N.I. Buchan, G. B. Stringfellow · Applied Physics Letters · 1988 · 152 citations

Natural Sciences, Chemistry, Materials Science +14