Japanese Journal of Applied Physics · 2007 · 52 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSensorsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDigital Image ProcessingImage ProcessingIntegrated Circuit DesignCmos Image SensorsComplementary Metal-oxide-semiconductor DevicesComplementary Metal-oxide-semiconductor Image SensorsCrosstalkCrosstalk MitigationCrosstalk ReductionFull-well CapacityPixel Pitch
A deep trench isolation (DTI) process with a 4 µm deep trench has been developed and successfully applied to 5-megapixel complementary metal oxide silicon (CMOS) image sensors with a 1.7 µm pixel pitch. It was found that from the results of simulations and experiments, DTI is very effective for reducing electrical crosstalk without degrading other pixel characteristics, such as full well capacity, sensitivity, and white spot density. Therefore, DTI could be a solution for obtaining a high performance for CMOS image sensors with a small pixel size of sub-2.0 µm.
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