Journal of Applied Physics · 2005 · 11 citations · 12 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsThin FilmsChemical Vapor DepositionOptical Thin FilmsOptoelectronic MaterialsOrganic SemiconductorsSemiconductor Device MaterialsThin Film Optical PropertiesAmorphous SiliconHydrogenated Amorphous SiliconInfrared Absorption SpectroscopyNitride Thin FilmsOrganic Light-emitting DiodesPlasma-enhanced Chemical Vapor DepositionPlasma-enhanced DepositionSilicon Nitride
A low-temperature passivation layer (≦100°C) with high impermeability and a high optical gap is required in top-emitting organic light-emitting diodes. Hydrogenated amorphous silicon nitride (a-SiNx:H) films fabricated by the plasma-enhanced chemical-vapor deposition of SiH4+NH3+N2 at 100°C fulfill this requirement. Infrared-absorption spectroscopy was used to monitor the permeability of the a-SiNx:H film. The optimum a-SiNx:H film with an optical gap of 3.1eV was fabricated at a gas ratio of SiH4:NH3:N2=10:3:197SCCM. The main absorption peaks of the a-SiNx:H films deposited at 70°C did not change at all, even following a 3000-h-long storage test.
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