Journal of the Physical Society of Japan · 1988 · 12 citations · 8 references
Natural SciencesMaterials SciencePhysicsMaterials PhysicsSemiconductor MaterialsSpectroscopyAmorphous Electronic MaterialsAmorphous SemiconductorsCarrier TransportSemiconductor PhysicsSilicon MaterialsUltrafast OpticsCarrier Recombination DynamicsConduction BandExcitationHydrogenated Amorphous SiliconMagnetic ResonanceNonradiative RecombinationSilicon PhysicsUltrafast Carrier Dynamics
The conduction band tail electron resonance was observed at 2 K in a-Si:H by time-resolved optically detected magnetic resonance experiments, using intense pulsed excitation. The exchange interaction between the tail electrons and the trapped holes at A centres was elucidated by the observation of shift of the A centre g -value with delay time of the microwave pulse after pulsed excitation. Dynamical processes of radiative and nonradiative recombination are discussed on the basis of the experimental results,
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