InGaAs/InP multiple quantum well waveguide phase modulator

Abstract

A double heterostructure ridge waveguide with multiple quantum well InGaAs/InP core and InP cladding layers has been operated as a phase modulator at 1.52 μm wavelength. The observed phase shift coefficient was 12°/V mm. With a 1-mm-long device we have achieved a half wavelength shift at 15 V bias and a maximum phase shift of 420° at 35 V. Quantum confined Stark effect has been observed in the shorter 1.49–1.52 μm wavelength region. The ability to obtain λ/2 modulation with a short device and relatively low voltage makes this device very attractive for practical applications.