Applied Physics Letters · 2004 · 38 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical DetectorsOptical Properties Of SemiconductorsPhotodetectorsPhotonic Integrated CircuitsSemiconductor DetectorsSilicon PhotonicsAvalanche MultiplicationAvalanche PhotodiodesOptical Absorption CoefficientQuantum EfficiencySilicon PhotodetectorsSilicon PhotodiodesSingle-photon Avalanche DiodesSingle-photon Detectors
In this letter, an InGaAs-on-Si single photon avalanche diode (SPAD) for telecommunication wavelengths is presented. This SPAD demonstrates high-single-photon quantum efficiency and low-dark-count probability under gated mode operation. We attributed the good performance of this device to the high absorption coefficient of InGaAs and low noise avalanche multiplication of Si.
13
Photon counting techniques with silicon avalanche photodiodes
H. Dautet, P. Deschamps, Bruno Dion et al. · Applied Optics · 1993 · 285 citations