Journal of Applied Physics · 1992 · 26 citations · 9 references
EngineeringElectrical EngineeringPhysicsQuantum MechanicsSemiconductor DevicesSemiconductor MaterialsQuantum TunnelingQuantum Well DevicesQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsTunnelingHeterostructuresResonant TunnelingResonant Tunneling DevicesTunneling BarriersTunneling CurrentTunneling In Quantum Well StructuresTunneling PhenomenaWave Impedance
A solution of resonant tunneling problem in multilayered heterostructures is presented based on the quantum mechanical wave impedance concept. The transmission matrix is found using open and short circuit tests. By using the transmission matrix approach the transmissivity of the structure is determined as a function of the incident electron energy. The J-V curves are obtained by using this approach and the results compare to previous models with good agreement. The method was then applied to a new quantum well three barrier structure, where the inner barrier height is variable. It is found that increasing the inner barrier height causes the resonance energies to align, meaning that coupling between the wells increases. By using this method, the analysis and tunneling current calculations of any structure can be easily figured and new tunneling quantum well devices can be designed.
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Tunneling in a finite superlattice
Raphael Tsu, L. Esaki · Applied Physics Letters · 1973 · 2.4K citations
The Quantum-Effect Device: Tomorrow's Transistor?
R. T. Bate · Scientific American · 1988 · 48 citations