Separation of storage effects in monolithic <i>p</i> <i>n</i> diode correlators

Abstract

The use of a combination of steady and pulsed dc biasing of a ZnO monolithic SAW device enabled a distinction to be made between surface-state and pn diode storage mechanisms in a single memory correlator device. By use of demonstrated biasing schemes, storage times of from tens of microseconds to tens of miliseconds are available in a single device.