Thin ferroelectric films of BaTiO3 on doped silicon

Abstract

Abstract Ferroelectric thin films of BaTiO3 of various thicknesses (near 1000 Å) have been fabricated on doped silicon wafers (1–5 ohm-cm) by rf sputtering (13.5 MHz) in pure oxygen. Post-deposition oxidation, annealing, and field stress during deposition improved thin film ferroelectric properties (polarizations, hysteresis loop) which became similar to bulk properties. Electrical characteristics of this structure have been studied in connection with possible use in electrostatic memory devices.