4-GHz 15-W power GaAs MESFET

Abstract

High-field behavior of GaAs MESFET's such as drain-source breakdown characteristics and visible light emission and a model explaining these phenomena are described. An FET structure with a high drain-source breakdown voltage in excess of 26 V has been developed following an analysis of the high-field behavior of the device. Typical characteristics of the fabricated devices at 4 GHz are as follows: P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</inf> = 9.6 W G <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">a</inf> = 5 dB η <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">add</inf> = 33.6 percent at 18 V from single chip (W <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf> = 13 mm) P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</inf> = 15 W G <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">a</inf> = 5 dB η <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">add</inf> = 28.3 percent at 22 V from two chip (W <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf> = 26 mm) where P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</inf> , G <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">a</inf> , η <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">add</inf> , and W <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf> indicate the output power, associated power gain, power added efficiency, and total gate width of the FET's, respectively.