Magnetic properties of NiFe films prepared using ion-beam sputtering

Abstract

The magnetic properties of NiFe films in the thickness range of 1 to 3 μm prepared using ion-beam sputtering were investigated by varying parameters such as the grid system, composition ratio of the targets, accelerator voltage and the beam current bombarding the substrate. The effects of the ion-assist voltage and ion-assist current on magnetic and electrical properties were investigated and the deposition conditions for NiFe films with low coercive force and resistivity were clarified. Due to their optimization of the ion-assist voltage and current, the ion-beam sputtered NiFe films have the low coercive force and resistivity necessary for thin film head applications.