Applied Physics Letters · 2011 · 109 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsMetal Oxide NanomaterialsNanowiresOptoelectronic DevicesOptoelectronic MaterialsPhotodetectorsSemiconductor Device MaterialsCarrier CollectionConformal CoatingLight AbsorptionNanowire PhotodetectorsResponsivitySemiconductor NanowiresUltraviolet-visible DetectionZinc Oxide Nanostructures
A radial heterojunction nanowire diode (RND) array consisting of a ZnO (shell)/Si (core) structure was fabricated using conformal coating of a n-type ZnO layer that surrounded a p-type Si nanowire. In both ultraviolet (UV) and visible ranges, the photoresponsivity of the RND was larger than that of a planar thin film diode (PD) owing to the efficient carrier collection with improved light absorption. Compared to a PD, in the forward bias, a 6 μm long RND resulted in a ∼2.7 times enhancement of the UV responsivity at λ=365 nm, which could be explained based on the oxygen-related hole-trap mechanism. Under a reverse bias, UV-blind visible detection was observed while the UV response was suppressed.
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ZnO Nanowire UV Photodetectors with High Internal Gain
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Light Trapping in Silicon Nanowire Solar Cells
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