Free exciton transitions and varshni's coefficients for GaN epitaxial layers grown by horizontal lp-mocvd

Temperature dependence of the energy gap in semiconductors

Y. P. Varshni · Physica · 1967 · 5.3K citations

Natural Sciences, Materials Science, Physics +16

Fundamental energy gap of GaN from photoluminescence excitation spectra

B. Ḿonemar · Physical review. B, Solid state · 1974 · 797 citations

Natural Sciences, Materials Engineering, Materials Science +17

Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

R. Dingle, D. D. Sell, S. E. Stokowski et al. · Physical review. B, Solid state · 1971 · 526 citations

Engineering, Materials Engineering, Materials Science +17

Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1997 · 330 citations

Engineering, Electrical Engineering, Optoelectronics +16

Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry

Bernard Gil, O. Briot, Roger-Louis Aulombard · Physical review. B, Condensed matter · 1995 · 311 citations

Natural Sciences, Materials Science, Physics +17