Applied Physics Letters · 1992 · 12 citations · 2 references
EngineeringSemiconductor DeviceElectromagnetic CompatibilitySemiconductorsTotal Surface FlashoverNanoelectronicsElectronic EngineeringActive RolePartial Surface FlashoverHigh-field Semiconductor-dielectric SystemsDevice ModelingElectrical EngineeringTime-dependent Dielectric BreakdownSemiconductor MaterialMicroelectronicsElectrical PropertySpecific ResistanceApplied PhysicsElectrical Insulation
The active role of the dielectric in high-field semiconductor-dielectric systems (HFSDS) and the experimental results concerning partial and total surface flashover in HFSDS are presented. The system negative differential resistance effect by partial surface flashover is explained on the basis of a two-channel model with an appropriate equivalent circuit correlated with the potential distribution along the semiconductor.
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F.E. Peterkin, T. Ridolfi, L. L. Buresh et al. · IEEE Transactions on Electron Devices · 1990 · 34 citations