Applied Physics Express · 2011 · 43 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptoelectronic DevicesOptoelectronic MaterialsQuantum WellsSemiconductor LasersSemiconductor PhysicsContinuous-wave LasersDiode Laser Threshold CurrentMolecular Beam EpitaxyQuantum Well Laser DiodesQuantum Well LasersQuantum Well StructuresSemiconductor Laser DiodesStrained Quantum Wells
We have grown laser diode structures using highly strained BeZnCdSe quantum wells by molecular beam epitaxy and successfully obtained continuous-wave lasing in the green-to-yellow spectral region (543–570 nm) at room temperature. The green-to-yellow lasing color was tuned by simply varying the Cd content of the quaternary BeZnCdSe quantum well. The threshold current densities of 20-µm-wide lasers were found to be sufficiently low (less than 0.85 kA/cm2). This result demonstrates that BeZnCdSe is a promising material for use as the active layer in high-performance green-to-yellow laser diodes.
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M. A. Haase, Jun Qiu, J. M. DePuydt et al. · Applied Physics Letters · 1991 · 1.6K citations
Laser diodes based on beryllium-chalcogenides
A. Waag, Frank Fischer, K. Schüll et al. · Applied Physics Letters · 1997 · 133 citations