Electron Effective Mass in ZnSe

Abstract

Infrared reflectance and Faraday rotation data were obtained for pure and for highly Al-doped n-type ZnSe crystals. Comparison of these data gave the free-carrier contribution to the dielectric constant and Faraday rotation, which, in turn, yielded the electron effective mass and carrier concentration. The result for the effective mass ratio, m*/m=0.17±0.025, agrees satisfactorily with previous estimates. The Hall scattering constant r was obtained from the optically measured carrier concentration and Hall effect data on the optical samples. The result, r≃1.4, for N≃0.7 Ndeg, is consistent with values found in other II-VI compounds.