Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy

Abstract

Carbon incorporation has been observed by infrared spectroscopy during the growth of a gallium arsenide film at 200 °C by molecular beam epitaxy. Infrared absorbances are observed at 2925 and 2855 cm−1 with a shoulder at 2950 cm−1. These frequencies are characteristic of the symmetric and asymmetric stretches of CH3 and/or CH2 groups.