Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1993 · 11 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsSemiconductor MaterialsEpitaxial GrowthSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsX-ray DiffractionBragg DiffractionDiffraction From Crystal PlanesEpitaxial Film GrowthEpitaxial Growth MorphologyEpitaxial MaterialsEpitaxial OverlayersSubstrate Overlayer Analysis
Triangulation from x-ray standing wave applied to three Bragg planes, together with symmetry considerations, have established the geometrical structure of epitaxial Bi overlayers on GaAs (110). Our results are consistent with the epitaxial continued layer structure model. Our analysis is based on prior experimental results that indicate two equally populated Bi sites.