Surface Oxidation of Silicon Nitride Films

Abstract

ESCA is used to characterize silicon nitride surface oxidation. Si 2p, N 1s, and O 1s binding energies and photoelectron line intensities of oxidized nitride films are compared with the corresponding lines from thick reference films of silicon, silicon nitride, silcon dioxide, and a series of oxynitrides. Rapid initial oxidation of silicon nitride surfaces occurs at room temperature on exposure of nitride films to air. A graded oxidized nitride film forms between the film surface and the nitride. Similarly, oxynitride films with gradations in composition are obtained upon oxidation of nitride films at high temperatures.