Applied Physics Letters · 1988 · 14 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyMetal-oxide-semiconductor Field-effect TransistorsMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor HeterostructuresSilicon MaterialsAvalanche BreakdownAvalanche Breakdown In Wide-bandgap DevicesBreakdown MechanismsBreakdown VoltageCarrier ConcentrationMetal-semiconductor Field-effect TransistorsSchottky Barrier CharacteristicsSilicon
Transistor action has been observed for the first time in a Si-TaSi2 eutectic composite. These devices, utilizing the in situ cylindrical Schottky junctions between the Si matrix and the TaSi2 rod phase, have characteristics typical of a metal-semiconductor field-effect transistor (MESFET). However, unlike a conventional planar device like a MESFET, eutectic transistors are resistant to avalanche breakdown. A device is demonstrated that blocks 600 V, a value that is three times larger than would be expected for a planar device of the same carrier concentration.
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