Applied Physics Letters · 1981 · 113 citations · 16 references
Natural SciencesChemistryMaterials ScienceElectrochemistrySemiconductor DevicesSemiconductor MaterialsPhotochemistryPhotovoltaic DevicesPhotovoltaic MaterialsSolar Cell MaterialsSolar CellsSurface OxidationConductionConduction BandOpen-circuit VoltageRedox PotentialRedox Potential ChangesSurface Oxidation MechanismsValence BandValence Band Structure
Oxidation of the surface of p-InP with alkaline peroxide and treatment with dilute potassium cyanide increase the efficiency of the p-InP/V2+−V3+ -HCl/C cell to 11.5%. The open circuit voltage of the cell follows the redox potential of the solution over a 0.5 V range. The lack of voltage pinning is consistent with photoemission studies of Spicer et al., showing that adsorption of oxygen on p-InP raises the surface fermi level from a position near the valence band maximum to noe near the conduction band minimum.
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Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
W. E. Spicer, I. Lindau, Perry Skeath et al. · Physical Review Letters · 1980 · 725 citations
Allen J. Bard, Andrew B. Bocarsly, Fu Ren F. Fan et al. · Journal of the American Chemical Society · 1980 · 491 citations