Cathodoluminescence of Intrinsic Defects in Glassy SiO2, Thermal SiO2 Films, and α-Quartz

Linards Skuja, W. Entzian

physica status solidi (a) · 1986 · 74 citations · 14 references

Concepts

Abstract

The three dominant cathodoluminescence bands in amorphous SiO2 with maxima at 1.9, 2.7, and 4.3 cV are identical to bands seen in photoluminescence (PL) spectra of irradiated or oxygen-deficient amorphous SiO2. On the basis of the previous PL work these cathodoluminescence (CL) bands can be attributed to non-bridging oxygen (O01) and twofold coordinated silicon (Si01) centers. The CL excitation mechanism involves also ionic processes. The origin of the ubiquitous blue radioluminescence in undamaged α-quartz is different from that of the 2.7 eV band CL in amor-phous SiO2 or electron-damaged α-quartz. A strict correlation between the intensities of CL bands and concentrations of the pertinent defects does not exist.

References

14