Electronics Letters · 1983 · 15 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesElectron Beam PhysicsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesNanoelectronicsCutoff FrequencyHigh-electron-mobility TransistorsHigh-frequency ElectronicsMaximum GainMicrowave DevicesMicrowave TransistorsMillimeter-wave TransistorsMonolithic Microwave Integrated Circuits
Quarter-micron gate length high electron mobility transistors have been fabricated using an electron-beam direct-writing technique. A maximum stable gain of 10 dB at 18 GHz has been measured at room temperature. A room-temperature cutoff frequency fT as high as 45 GHz has also been obtained.