Japanese Journal of Applied Physics · 1994 · 12 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureSurface ScienceThin FilmsChemical Vapor DepositionEpitaxial GrowthAmorphous Thin FilmsDiffraction PatternsEpitaxial Film MorphologyPlasma-enhanced Chemical Vapor DepositionPolycrystalline Thin FilmsX-ray Diffraction Analysis
We grew epitaxial CeO 2 films on (1̄012) sapphire by halide source plasma enhanced chemical vapor deposition (halide-PECVD) using CeBr 3 and O 2 as source materials. We obtained amorphous films at substrate temperatures of 620° C, polycrystalline films at 680° C, and highly aligned films at 720°C. X-ray diffraction patterns show that (001) CeO 2 is parallel to (1̄012) sapphire, and electron channeling patterns show [110] CeO 2 aligned with [22̄01] sapphire. AFM shows very smooth films with a maximum variation of ± 2 nm. We grew YBCO film on CeO 2 /sapphire with a T c of 83 K.
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<i>a</i>-axis oriented YBa2Cu3O7−<i>x</i> thin films on Si with CeO2 buffer layers
Li Luo, X. D. Wu, R. C. Dye et al. · Applied Physics Letters · 1991 · 115 citations
Large-area YBa2Cu3O7−δ thin films on sapphire for microwave applications
Ben Cole, G.-C. Liang, N. Newman et al. · Applied Physics Letters · 1992 · 105 citations
Natural Sciences, Electrical Engineering, Materials Science +17