M. W. Denhoff - Concepedia

Author

M. W. Denhoff

Also Known As

Denhoff, M. W., Denhoff, Mike W., M W Denhoff, M. Denhoff, M. W. DENHOFF, M. W. Denhoff, M.W. Denhoff, Mike Denhoff, Mike W. Denhoff

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

National Research Council Canada Institute for Microstructural Sciences National Academies of Sciences, Engineering, and Medicine University of Calgary University of Ottawa

About

M. W. Denhoff is an author at National Research Council Canada specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	24	1K
2	Applied Physics	16	22	905
3	Social Sciences	3	3	77
4	Medicine	1	1	19
5	Natural Sciences	1	1	23

M. W. Denhoff

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Growth and characterization of Si1−<i>x</i>Ge<i>x</i> and Ge epilayers on (100) Si J.‐M. Baribeau, T. E. Jackman, D. C. Houghton, Journal of Applied Physics Materials ScienceMaterials EngineeringSemiconductorsDislocation DensitiesEngineering	1988	117
A Comparison between RF MEMS Switches and Semiconductor Switches P. D. Grant, M. W. Denhoff, Raafat R. Mansour Electrical EngineeringEngineeringRadio FrequencyRf SemiconductorAntenna	2006	92
Defects and Impurities at the Si/Si(100) Interface Studied with Monoenergetic Positrons Peter J. Schultz, E. Tandberg, K. G. Lynn, Physical Review Letters EngineeringSilicon EpilayersMonoenergetic PositronsSilicon On InsulatorNanoelectronics	1988	87
Ordering in Si1−xGex crystals D. J. Lockwood, Krishna Rajan, E.W. Fenton, Solid State Communications EngineeringCrystal MaterialSi1−xgex CrystalsApplied PhysicsCondensed Matter Physics	1987	75
Epitaxial Y1Ba2Cu3O7 thin films on CeO2 buffer layers on sapphire substrates M. W. Denhoff, J. P. McCaffrey Journal of Applied Physics Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringSapphire Substrates	1991	72
An accurate calculation of spreading resistance M. W. Denhoff Journal of Physics D Applied Physics Thickness RatioEngineeringMechanical EngineeringContact SizeResistor	2006	71
Misfit dislocation structure at a Si/Si<i>x</i>Ge1−<i>x</i> strained-layer interface Krishna Rajan, M. W. Denhoff Journal of Applied Physics Electrical EngineeringEngineeringMisfit Dislocation StructurePartial DislocationDislocation Interaction	1987	55
A measurement of Young s modulus and residual stress in MEMS bridges using a surface profiler M. W. Denhoff Journal of Micromechanics and Microengineering EngineeringMicromechanicsMechanical EngineeringProfilometer ProbeMicroelectromechanical Systems	2003	52
A novel silicon patch‐clamp chip permits high‐fidelity recording of ion channel activity from functionally defined neurons Christophe Py, M. W. Denhoff, Marzia Martina, Biotechnology and Bioengineering EngineeringIon Channel ActivitySynaptic TransmissionChip SurfaceNeurotransmission	2010	48
Characterization of MBE grown Si/GexSi1−x strained layer superlattices D. C. Houghton, D. J. Lockwood, M. W. C. Dharma‐wardana, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringApplied PhysicsLayer Superlattices	1987	47

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