M. W. Denhoff

Growth and characterization of Si1−<i>x</i>Ge<i>x</i> and Ge epilayers on (100) Si

J.‐M. Baribeau, T. E. Jackman, D. C. Houghton et al. · Journal of Applied Physics · 1988 · 117 citations

Materials Science, Materials Engineering, Semiconductors +13

A Comparison between RF MEMS Switches and Semiconductor Switches

P. D. Grant, M. W. Denhoff, Raafat R. Mansour · 2006 · 92 citations

Electrical Engineering, Engineering, Radio Frequency +11

Defects and Impurities at the Si/Si(100) Interface Studied with Monoenergetic Positrons

Peter J. Schultz, E. Tandberg, K. G. Lynn et al. · Physical Review Letters · 1988 · 87 citations

Engineering, Silicon Epilayers, Monoenergetic Positrons +18

Ordering in Si1−xGex crystals

D. J. Lockwood, Krishna Rajan, E.W. Fenton et al. · Solid State Communications · 1987 · 75 citations

Engineering, Crystal Material, Si1−xgex Crystals +4

Epitaxial Y1Ba2Cu3O7 thin films on CeO2 buffer layers on sapphire substrates

M. W. Denhoff, J. P. McCaffrey · Journal of Applied Physics · 1991 · 72 citations · Full text

Materials Engineering, Materials Science, Epitaxial Growth +13