Negative differential resistance and resistance switching behaviors in BaTiO3 thin films

Abstract

The polycrystalline BaTiO3 (BTO) thin films were grown on F-doped SnO2 substrates by pulsed laser deposition. The devices show a rectification at a small voltage, while bipolar resistive switching (RS) and negative differential resistance (NDR) appear at a large voltage. Furthermore, RS remains and NDR disappears when no positive bias is applied, while both RS and NDR behaviors improve when increasing the positive bias. The electrons trapped/detrapped by interface states at Au/BTO interface are proposed to understand the above behaviors.