Publication | Open Access
Growth of sparse arrays of narrow GaN nanorods hosting spectrally stable InGaN quantum disks
11
Citations
21
References
2012
Year
Quantum PhotonicsEngineeringWafer-scale ProductionOptoelectronic DevicesSparse ArraysNanophotonicsPhotonicsQuantum SciencePhotoluminescencePhysicsSmall Rod DiameterQuantum DevicePhotonic MaterialsOptoelectronic MaterialsAluminum Gallium NitrideCategoryiii-v SemiconductorPhotonic DeviceStrain RelaxationApplied PhysicsGan Power DeviceQuantum DevicesNarrow Gan NanorodsQuantum Photonic DeviceOptoelectronics
Wafer-scale production of single InGaN quantum disks (QD) in-a-nanorod array with small rod diameter (> 9 nm) and low rod-density (< 108 cm−2) has been achieved without extensive processing steps. Excitation power-dependent μPL spectrum of single QD reveals multi-excitonic peak with 0.75 meV blue-shift for 3 orders of magnitude increasing power, indicating the present system is spectrally stable and nearly free of quantum-confined Stark effects, due possibly to the strain relaxation induced by free surface of small rod diameters. The fully polarized emissions, a high working temperature (180 K), low rod density and good alignment, render this system promising as a potential quantum photon source.
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