Publication | Closed Access
Fine Structure of Biexciton Emission in Symmetric and Asymmetric CdSe/ZnSe Single Quantum Dots
385
Citations
19
References
1999
Year
Ii-vi SemiconductorQuantum ScienceSingle-exciton TransitionPhotoluminescenceEngineeringPhysicsNanoelectronicsBiexciton EmissionBiexciton LinesApplied PhysicsQuantum DotsExcitation Energy TransferFine StructureQuantum Photonic DeviceOptoelectronicsCompound SemiconductorSemiconductor Nanostructures
The influence of quantum dot (QD) asymmetry on the emission of single three-dimensionally confined biexcitons in II-VI semiconductor nanostructures has been studied by magnetophotoluminescence spectroscopy. Investigating both the biexciton and the single-exciton transition in the same single QD, we obtain a unified picture of the impact of electron-hole exchange interaction on the fine structure and the polarization properties of optical transitions in QDs. The exchange splitting is demonstrated to have a strong influence on the derivation of the biexciton binding energy, which we determine to be about 17 meV, much less than the separation between exciton and biexciton lines ( $\ensuremath{\approx}24$ meV) in the spectra.
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