Properties of Oxidized SnO₂ Single Crystals

Abstract

Undoped SnO 2 single crystals are heat-treated in high pressure oxygen gas for the purpose to “oxidize” the crystals. The decrease in carrier density with the advance of the oxidization is examined by means of infrared transmission measurements. It is concluded that the “oxidizing procedure” effectively diminishes the amount of native defects involved in the crystals. Spectral dependence of the ultraviolet photoconductivity of the oxidized crystals is analysed in relation to the band structure of the material.