Vapor Reaction Growth of SnO₂ Single Crystals and Their Properties

Abstract

In order to obtain single crystals of SnO 2 which can be used for the investigation of the intrinsic electrical and other related properties, crystal growth by the method using the vapor reaction of SnCl 4 with H 2 O was attempted, and was successfully performed. Colorless transparent single crystals with sizes up to 2×5×15 mm could be obtained by 24 hr run at 1300°C. The measurements of crystallographic properties, optical transmission, electrical conductivity and Hall effect were carried out with the grown single crystals. The crystals were found to be twins having {011} twinning plane. It was shown that the crystal is a typical n-type broad-band semiconductor having the value of the conductivity of a few Ω -1 ·cm -1 and the mobility of about 200 cm 2 ·volt -1 ·sec -1 at room temperature. The mobility of the crystals was found to change by the equation µ∝ T -2 above 250°K.