Physical Review Letters · 2010 · 91 citations · 19 references
Optical MaterialsEngineeringOrganic ElectronicsOrganic Semiconductor FilmSurface-enhanced Raman ScatteringOrganic Semiconductor FilmsChemistryPolariton DynamicOptical PropertiesDip FilmOptical SpectroscopyNanophotonicsPlasmonic MaterialNanotechnologyOrganic SemiconductorTopographic ImagesOrganic Charge-transfer CompoundPlasmonicsApplied Physics
Tip-enhanced near-field optical images and correlated topographic images of an organic semiconductor film (diindenoperylene, DIP) on Si have been recorded with high optical contrast and high spatial resolution (17 nm) using a parabolic mirror with a high numerical aperture for tip illumination and signal collection. The DIP molecular domain boundaries being one to four molecular layers (1.5-6 nm) high are resolved topographically by a shear-force scanning tip and optically by simultaneously recording the 6x10{5} times enhanced photoluminescence (PL). The excitation is 4x10{4} times enhanced and the intrinsically weak PL-yield of the DIP-film is 15-fold enhanced by the tip. The Raman spectra indicate an upright orientation of the DIP molecules. The enhanced PL contrast results from the local film morphology via stronger coupling between the tip plasmon and the exciton-polariton in the DIP film.
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Nanoscale chemical analysis by tip-enhanced Raman spectroscopy
Raoul M. Stöckle, Yung Doug Suh, Volker Deckert et al. · Chemical Physics Letters · 2000 · 1.6K citations
Multiphonon Raman Spectrum of Silicon
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