Rapid Roughening in Thin Film Growth of an Organic Semiconductor (Diindenoperylene)

Abstract

The scaling exponents alpha, beta, and 1/z in thin films of the organic molecule diindenoperylene deposited on SiO2 under UHV conditions are determined. Atomic-force microscopy, x-ray reflectivity, and diffuse x-ray scattering were employed. The surface width displays power law scaling over more than 2 orders of magnitude in film thickness. We obtained alpha = 0.684+/-0.06, beta = 0.748+/-0.05, and 1/zeta = 0.92+/-0.20. The derived exponents point to an unusually rapid growth of vertical roughness and lateral correlations. We suggest that they could be related to lateral inhomogeneities arising from the formation of grain boundaries between tilt domains in the early stages of growth.