MATERIALS TRANSACTIONS · 2004 · 22 citations · 21 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsOptoelectronicsThin FilmsDopingOptical Thin FilmsSemiconductor Thin FilmsThin Film Electrical PropertiesThin Film Optical PropertiesThin-film MaterialsCrystalline StructureDoping EffectsDoping In Thin FilmsMagnetron SputteringOptical PropertiesResistivityThin Oxide FilmsZinc Oxides
Germanium-doped zinc oxide thin films with Ge content of 0∼8.1 at% were deposited by an RF magnetron sputtering. The electrical and optical properties of the films were investigated. The Ge doping caused the reduction of resistivity of the films, and at about 3% of the Ge content showed the minimum resistivity of about 2 × 10−3 Ωcm. With high content of Ge, however, the crystalline structure changed and the resistivity of the film increased.
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New <i>n</i>-Type Transparent Conducting Oxides
Tadatsugu Minami · MRS Bulletin · 2000 · 993 citations
Natural Sciences, Materials Engineering, Materials Science +10