Electronics Letters · 1992 · 13 citations · 2 references
Device ModelingElectrical EngineeringNoise ModelEngineeringRf SemiconductorNoise ControlHigh-frequency DeviceElectronic EngineeringNoiseNoise ReductionActive Noise ControlLimited RoptMicroelectronicsMicrowave EngineeringEquivalent CircuitElectromagnetic Compatibility
A noise model based on an equivalent circuit is applied to an HEMT. Besides the frequency dependence of the most important noise parameters (Fmin, Xopt, Xopt, RN) two apparent experimental facts are explained: the limited Ropt, Xopt and the increase of RN with decreasing frequency.
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