IEEE Transactions on Microwave Theory and Techniques · 1988 · 241 citations · 39 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDevice ModelingHigh-frequency Semiconductor DevicesNoiseNoise In Electronic DevicesNoise In Semiconductor DevicesNoise MeasurementElectron MobilityHigh-electron-mobility TransistorsMeasurement TechniquesNoise FigureNoise In Field-effect TransistorsNoise In High-frequency Semiconductor DevicesNoise ParametersTransistor Noise
The high electron mobility transistor's (HEMT's) noise behavior is presented from theoretical and experimental points of view. The general method used in the high-frequency noise analysis is described and the different approximations commonly used in the derivation of the noise parameter expressions are discussed. A comparison between the noise performance of both MESFETs and HEMTs is carried out. The measurement techniques providing the noise figure and the other noise parameters are then described and compared.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Horst Rothe, Walter E. Dahlke · Proceedings of the IRE · 1956 · 417 citations
Thermal Noise in Field-Effect Transistors
A. Der Ziel · Proceedings of the IRE · 1962 · 345 citations
The determination of device noise parameters
Richard Q. Lane · Proceedings of the IEEE · 1969 · 275 citations
Engineering, Computer Engineering, Electrical Engineering +16