Thin-film CaF2 inorganic electron resist and optical-read storage medium

Abstract

Polished silicon substrates were e-gun deposited with 100-nm films of CaF2 in a molecular beam epitaxy vacuum station. Measurements of this material system reveal a factor of 35 reduction in reflectivity for films exposed to electron irradiation. Exposure is accomplished by simply viewing the desired area using a 3-kV Auger electron microprobe. It is further reported that this exposed inorganic material can be developed (selectively washed away) in H2O. In addition, both over and under exposures have been observed. Optimum electron exposure dose has been determined to be 0.1–0.2 C/cm2.