Low Temperature Deposition of Pb(Zr,Ti)O₃ Film by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition

Abstract

We prepared Pb(Zr,Ti)O 3 [PZT] thin films on (111)Pt/Ti/SiO 2 /Si substrates at 395 to 580°C by metalorganic chemical vapor deposition (MOCVD). PZT thin films with Zr/(Zr+Ti)=0.62 prepared by conventional continuous source gas introduction (continuous-MOCVD) and pulse introduction (pulse-MOCVD) were compared. Film with higher crystallinity and smoother surfaces were obtained by pulse-MOCVD compared with continuous-MOCVD. Moreover, the leakage current density of the film decreased and ferroelectricity increased with pulse-MOCVD. Ferroelectricity decreased with decreasing the deposition temperature, but the remanent polarization (Pr) value was 22.5 µC/cm 2 for the film with a 5 nm-thick PbTiO 3 buffer layer deposited at 395°C by pulse-MOCVD, while ferroelectricity was not obtained for the film deposited by continuous-MOCVD at the same deposition temperature.