Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell

<i>Semiconductor Optoelectronic Devices</i>

P. Bhattacharya, Lily Pang · Physics Today · 1994 · 644 citations

Engineering, Electrical Engineering, Materials Science +16

Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy

G. W. Wicks, Maximilian Koch, J. A. Varriano et al. · Applied Physics Letters · 1991 · 82 citations

Natural Sciences, Materials Engineering, Materials Science +13

Photoluminescent and electrical properties of InGaPAs mixed crystals liquid phase epitaxially grown on (100) GaAs

Seiji Mukai · Journal of Applied Physics · 1983 · 59 citations

Natural Sciences, Materials Science, Physics +17

Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus

James N. Baillargeon, A. Y. Cho, R. Fischer et al. · Applied Physics Letters · 1994 · 48 citations

Engineering, Materials Engineering, Materials Science +17

Design and operation of a valved solid-source As2 oven for molecular beam epitaxy

D. L. Miller, Sukanta Bose, G.J. Sullivan · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 36 citations

Engineering, Materials Engineering, Materials Science +15