J. A. Varriano

Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy

G. W. Wicks, Maximilian Koch, J. A. Varriano et al. · Applied Physics Letters · 1991 · 82 citations

Materials Science, Materials Engineering, Solid Phosphorus +12

Phosphorus-vacancy-related deep levels in GaInP layers

Zhongjie Huang, C. R. Wie, J. A. Varriano et al. · Journal of Applied Physics · 1995 · 31 citations

Semiconductors, Wide-bandgap Semiconductor, Semiconductor Technology +15

GaInP and AlInP grown by elemental source molecular beam epitaxy

J. A. Varriano, Maximilian Koch, F.G. Johnson et al. · Journal of Electronic Materials · 1992 · 17 citations

Materials Science, Engineering, Applied Physics +3

Single quantum well GaAs/AlGaAs separate confinement heterostructure lasers with <i>n</i>-type modulation doped cores

Steven M. Shank, J. A. Varriano, G. W. Wicks · Applied Physics Letters · 1992 · 13 citations

Wide-bandgap Semiconductor, Photonics, Engineering +12

Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing

Kang Xie, C. R. Wie, J. A. Varriano et al. · Journal of Electronic Materials · 1994 · 10 citations

Electrical Engineering, Engineering, Applied Physics +5