GaInP and AlInP grown by elemental source molecular beam epitaxy

Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy

Akiko Gomyo, T. Suzuki, K. Kobayashi et al. · Applied Physics Letters · 1987 · 437 citations

Materials Science, Semiconductors, Engineering +15

A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell

J. M. Olson, Sarah Kurtz, A. Kibbler et al. · Applied Physics Letters · 1990 · 310 citations

Wide-bandgap Semiconductor, Engineering, Energy Efficiency +17

The effect of elastic strain on energy band gap and lattice parameter in III-V compounds

G.H. Olsen, C. J. Nuese, R. T. Smith · Journal of Applied Physics · 1978 · 109 citations

Optical Materials, Engineering, Optoelectronic Devices +23

Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy

G. W. Wicks, Maximilian Koch, J. A. Varriano et al. · Applied Physics Letters · 1991 · 82 citations

Materials Science, Materials Engineering, Solid Phosphorus +12

Excitation intensity dependence of photoluminescence in Ga0.52In0.48P

M. C. DeLong, P. C. Taylor, J. M. Olson · Applied Physics Letters · 1990 · 81 citations

Ii-vi Semiconductor, Epitaxial Growth, Photoluminescence +11