Applied Physics Letters · 1990 · 81 citations · 16 references
EngineeringMaterials EngineeringMaterials ScienceCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsElectronic Band StructureEpitaxial GrowthOptical Properties Of SemiconductorsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand GapBand Gap EnergyEpitaxial Film GrowthEpitaxial MaterialsExcitationMicrostructurePhotoluminescenceSubstrate Orientation Effects
The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering and the band-gap energy of this material are functions of growth conditions. We report here on a PL emission which shifts rapidly with excitation intensity. The rate of emission shift is also a function of growth conditions including substrate orientation. There is, however, no significant correlation between the band-gap energy and the rate of emission shift in Ga0.52In0.48P. This PL shift is explained in terms of band filling of potential fluctuations that are associated with a microstructure consisting of ordered domains within a disordered matrix.
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A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
J. M. Olson, Sarah Kurtz, A. Kibbler et al. · Applied Physics Letters · 1990 · 310 citations
Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy et al. · Applied Physics Letters · 1989 · 273 citations