Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the <i>c</i> -Axis Parallel to the Substrate

Abstract

We report on N-doped p-type ZnO films with the c-axis parallel to the substrate. ZnO films were prepared on an α-Al2O3 (0001) substrate by solid-source chemical vapour deposition (CVD). Zn(CH3COO)2·2H2O was used as the precursor and CH3COONH4 as the nitrogen source. The growth temperature was varied from 300°C to 600°C. The as-grown ZnO film deposited at 500°C showed p-type conduction with its resistivity of 42 Ωcm, carrier density 3.7×1017 cm-3 and Hall mobility 1.26 cm2V-1·s-1 at room temperature, which are the best properties for p-type ZnO deposited by CVD. The p-type ZnO film possesses a transmittance of about 85% in the visible region and a bandgap of 3.21 eV at room temperature.