Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO

Abstract

The major chemical trends in the energy levels of $s{p}^{3}$-bonded substitutional deep impurities in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO are predicted. N impurities (deposited on the anion site by ion implantation) appear to be candidates for producing shallow $p$-type dopants in these materials.