Concepedia

InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs

Eliezer Weiss, O. Klin, Steve Grossmann, N. Snapi, Inna Lukomsky, D. A. Aronov, Michael Yassen, Eyal Berkowicz, A. Glozman, P. C. Klipstein,

Journal of Crystal Growth · 2011 · 60 citations · 8 references

Concepts

EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsGallium Nitride (Gan) MaterialsMolecular Beam Epitaxy

References

8

XB<italic>n</italic> barrier photodetectors based on InAsSb with high operating temperatures

P. C. Klipstein · Optical Engineering · 2011 · 75 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate

Binh Minh Nguyen, Darin Hoffman, Edward Kwei-wei Huang et al. · Applied Physics Letters · 2009 · 60 citations

Engineering, Electrical Engineering, Materials Science +17

InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy

Wim Dobbelaere, Paul Heremans, R. Mertens et al. · Applied Physics Letters · 1992 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

GaSb quantum-well-based “buffer-free” vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays

M. Mehta, Ganesh Balakrishnan, S. Huang et al. · Applied Physics Letters · 2006 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Room-temperature lasing at 1.82μm of GaInSb∕AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array

Jun Tatebayashi, A. Jallipalli, M. N. Kutty et al. · Applied Physics Letters · 2007 · 26 citations · Full text

Engineering, Electrical Engineering, Materials Science +17