Influence of Hg pressure on diffusion coefficient of As in HgCdTe

DIffusion in Semiconductors

Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 1970 · 271 citations

Semiconductors, Engineering, Diffusion Resistance +5

Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper Doped

H. R. Vydyanath · Journal of The Electrochemical Society · 1981 · 159 citations

Engineering, Undoped Crystals, Solid-state Chemistry +18

Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutions

H. R. Vydyanath, J. Ellsworth, C. Devaney · Journal of Electronic Materials · 1987 · 73 citations

Materials Science, Electrical Engineering, Engineering +5

Diffusion in semiconductors

Materials Research Bulletin · 1971 · 49 citations

Semiconductors, Engineering, Diffusion Resistance +5

Mechanisms of incorporation of donor and acceptor dopants in (Hg,Cd)Te alloys

H. R. Vydyanath · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 45 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +15