Defects in silicon: Concepts and correlations

Abstract

Abstract A review of irradiation produced defects in Si is presented with emphasis on correlations of macroscopic properties with microscopic defects. Such correlation have been successfully used to interpret the electrical properties of irradiated n-type Si. Additional correlation studies are needed to obtain a more complete interpretation of the electrical properties of irradiated p-type Si. As a further step in this direction, new data are presented on the annealing recovery of the hole concentration in electron-irradiated Al-doped and B-doped Si. The concept of vacancy-rich defect clusters, together with concepts and data on point defects, explain many aspects of neutron radiation damage. The same defects, concepts, and correlations used in studies of electron and neutron produced damage are also useful for interpreting radiation damage produced by ion implantation.