Applied Physics Letters · 2005 · 43 citations · 10 references
Natural SciencesMaterials SciencePhysicsSolid State PhysicsSpectroscopyThin FilmsElectron-phonon InteractionsFerroelectric CeramicsFerroelectric MaterialsPiezoelectric MaterialsRaman SpectroscopyThin-film MaterialsEpitaxial Thin FilmsFerroelectric PropertiesPhononsPolarizationPolarized Raman SpectroscopyRaman ScatteringRaman SpectraVolume Fraction Effects
We have investigated polarized Raman spectra of (001)/(100)-oriented tetragonal epitaxial Pb(ZrxTi1−x)O3 (PZT) thin films (x=∼0.35) in which the volume fraction of the polar c domain is systematically varied from 4% to 96%. From polarization analyses using high epitaxial quality films, we have successfully isolated the A1 and B1 phonons from the E phonons, thus offering a distinctive evaluation of the c domains. As increasing c-domain volume, the A1(TO) modes linearly increase in their intensity. A remarkable correlation is found between the A1(1TO)-mode intensity and the c-domain volume for PZT films. We suggest that this correlation as well as the A1(1TO)-mode intensity provide a simple and useful probe for characterization of c-domain volume and ferroelectric properties in PZT-based devices.
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J. F. Scott, Carlos A. Paz de Araújo · Science · 1989 · 3.8K citations
Natural Sciences, Electrical Engineering, Materials Science +17
The Physics of Ferroelectric Memories
Orlando Auciello, J. F. Scott, R. Ramesh · Physics Today · 1998 · 1.3K citations