Epitaxial growth of GaAs on insulating substrates using HCl-H2 vapor transport

SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES

H. M. Manasevit · Applied Physics Letters · 1968 · 422 citations

Natural Sciences, Materials Engineering, Materials Science +15

The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine

J. J. Tietjen, J. A. Amick · Journal of The Electrochemical Society · 1966 · 276 citations

Natural Sciences, Materials Science, Physics +17

The preparation of high purity gallium arsenide by vapour phase epitaxial growth

J.R. Knight, D. Effer, P. R. Evans · Solid-State Electronics · 1965 · 146 citations

Natural Sciences, Materials Engineering, Materials Science +12

Vapor Growth of Gallium Arsenide

R. L Newman, N. Goldsmith · Journal of The Electrochemical Society · 1961 · 26 citations

Engineering, Materials Engineering, Materials Science +17

The Substrate Orientation Effect on Impurity Profiles of Epitaxial GaAs Films

R. R. Moest · Journal of The Electrochemical Society · 1966 · 20 citations · Full text

Engineering, Electrical Engineering, Materials Science +17