High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance

Abstract

InGaN-based micro-light-emitting diodes (µ-LEDs) emitting at 470 nm and composed of micropixels each with controlled shaping achieves directed light output with an angular full width at half maximum of 48°. The reflected light from the mesa sidewalls is azimuthally polarized. The small signal bandwidth of an individual µ-LED is >500 MHz. A cluster of 14 µ-LEDs is used to achieve a large signal data transfer rate of 500 Mbps in a form which is compatible with communication over plastic optical fibre.